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P3504BD - N-Channel MOSFET

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Datasheet Details

Part number P3504BD
Manufacturer UNIKC
File Size 480.13 KB
Description N-Channel MOSFET
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P3504BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 40mΩ @VGS = 10V ID 20A TO-252 100% Rg tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) 100% UIS tested PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage Gate-Source Voltage VDS 40 V VGS ±20 V Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy TC = 25 °C TC = 70 °C L = 0.1mH ID IDM IAS EAS 20 16 A 60 20 20 mJ Power Dissipation TC = 25 °C TC = 70 °C Operating Junction & Storage Temperature Range PD TJ, TSTG 30 20 -55 to 150 W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJC RqJA TYPICAL MAXIMUM 4.
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