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P5003QVT
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 30V
RDS(ON) 27.5mΩ @VGS =10V
-30V
45mΩ @VGS = -10V
ID Channel 10A N -7A P
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
N 30 VDS P -30
Gate-Source Voltage
N ±20 VGS P ±20
Continuous Drain Current
TA = 25 °C TA = 70°C
N 10 P -7 ID N 7 P -5
Pulsed Drain Current1
N 20 IDM P -20
Power Dissipation
TA = 25 °C TA = 70 °C
N 2.5
P PD
N 1.6
P
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
W °C
REV 1.0
1 2014/9/30
P5003QVT
N&P-Channel Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
P5003QVT Datasheet
