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P5015BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
150V
50mΩ @VGS = 10V
ID 24A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 150
Gate-Source Voltage
VGS ±20
Continuous Drain Current1 Pulsed Drain Current2
TC = 25 °C TC = 100 °C
ID IDM
24 15 90
Avalanche Current
IAS 19
Avalanche Energy
L=0.1mH
EAS
18
Power Dissipation
TC = 25 °C TC = 100 °C
PD
78 31
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case
Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited by package.
SYMBOL RqJC RqJA
TYPICAL
MAXIMUM 1.6 62.5
UNITS °C / W
Rev 1.
P5015BD Datasheet
