The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
P6002OAG
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 60mΩ @VGS = 4.5V
-20V
115mΩ @VGS = -4.5V
ID 3.4A -2.5A
Channel N P
TSOP-6
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
VDS
N 20 P -20
Gate-Source Voltage
N ±8 VGS P ±8
Continuous Drain Current
TA = 25 °C TA = 70 °C
N 3.4 P -2.5 ID N 2.7 P -2
Pulsed Drain Current1
N 15 IDM P -15
Avalanche Current1
N 5.5 IAS P -12
Avalanche Energy
L = 0.1mH
N 1.5 EAS P 7.4
Power Dissipation
TA = 25 °C TA = 70 °C
N 1.14 P 1.14 PD N 0.72 P 0.72
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
REV 1.
P6002OAG Datasheet
