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P6003QEA
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 24mΩ @VGS = 10V
-30V
60mΩ @VGS = -10V
ID 20A -12A
Channel N P
PDFN 3x3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
N 30 VDS P -30
Gate-Source Voltage
N ±20 VGS P ±20
TC = 25 °C
N 20 P -12
Continuous Drain Current2
TC = 100 °C TA = 25 °C
ID
N 13 P -8 N 7.3 P -4.3
TA = 70 °C
N 5.8 P -3.4
Pulsed Drain Current1
N 60 IDM P -30
Avalanche Current
N 17.4 IAS P -18
Avalanche Energy
L = 0.1mH
N 15 EAS P 16.2
Power Dissipation
TC = 25 °C TC = 100 °C
PD
N 16 P 15 N6 P6
Ver 1.
P6003QEA Datasheet
