The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
P6010DTFG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-100V
60mΩ @VGS = -10V
ID -24A
TO-220F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -100
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1,2
TC = 25 °C TC = 100 °C
ID IDM
-24 -15 -96
Avalanche Current
IAS -52
Avalanche Energy
L = 0.1mH
EAS
139
Power Dissipation
TC = 25 °C TC = 100 °C
PD
62 15
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Limited by package.
SYMBOL RqJC
TYPICAL
MAXIMUM UNITS 2 °C / W
Ver 1.
P6010DTFG Datasheet
