The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
P6015CSG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
150V
60mΩ @VGS = 10V
ID 21A
TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 150
Gate-Source Voltage
VGS ±12
Continuous Drain Current2
Pulsed Drain Current1，2 Avalanche Current3
TC= 25 °C TC= 100 °C
ID
IDM IAS
21 13 60 16
Avalanche Energy3
EAS 128
Power Dissipation
TC= 25 °C TC= 100°C
PD
68 27
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3VDD = 50V , L = 1mH ,starting TJ = 25˚C.
P6015CSG Datasheet
