UNIKC P8008BD
N-Channel MOSFET
| Part No. | P8008BD |
|---|---|
| Datasheet | P8008BD Download |
| Manufacturer |  UNIKC |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 80 Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 Avalanche Current1 TC = 25 °C ID 15 TC = 100 °C 10 IDM 60 IAS,IAR 23 Avalanche Energy Repetitive Avalanche Energy1 L=0.1mH EAS 27 EAR See Figure5,6 Power Dissipation TC = 25 °C PD 39 TC = 100 °C 15 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJC RqJA TYPICAL MAXIMUM 3.2 50 UNITS °C / W REV1.2 1 2014/6/16 P8008BD N-Channel Enhancement Mode MOSFETELECTRICAL CHARACTERISTICS
(TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, V...
