UNIKC P8008BDA
N-Channel Transistor
| Part No. | P8008BDA |
|---|---|
| Datasheet | P8008BDA Download |
| Manufacturer |  UNIKC |
| Description | N-Channel Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 80 Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 16 10 50 Avalanche Current IAS 15 Avalanche Energy L=0.1mH EAS 11 Power Dissipation TC = 25 °C TC = 100 °C PD 39 15 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJC RqJA TYPICAL MAXIMUM 3.2 62.5 UNITS °C / W REV 1.1 1 2015/7/29 P8008BDA N-Channel Enhancement Mode MOSFETELECTRICAL CHARACTERISTICS
(TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltag
