The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
P8008HV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
80V 80mΩ @VGS = 10V
ID 4A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 80
Gate-Source Voltage
VGS ±25
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
4 3 20
Power Dissipation
TA = 25 °C TA = 70 °C
PD
1.9 1.2
Operating Junction & Storage Temperature Range Lead Temperature (1/16" from case for 10 sec.)
TJ, TSTG TL
-55 to 150 275
UNITS V
A
W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient Junction-to-Lead 1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA RqJL
TYPICAL
MAXIMUM
65 25
UNITS °C / W
Ver 1.
P8008HV Datasheet
