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PA210HK
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
120mΩ @VGS = 10V
ID 8.7A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
8.7 ID 5.5 IDM 25
Continuous Drain Current
TA = 25 °C TA = 70 °C
2.8 ID 2.2
Avalanche Current
IAS 8.7
Avalanche Energy
L = 1mH
EAS 37.8
Power Dissipation
TC = 25 °C TC = 100 °C
20 PD 8
Power Dissipation
TA = 25 °C TA = 70 °C
2.1 PD 1.
PA210HK Datasheet
