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PA210HVA
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
120mΩ @VGS = 10V
ID 2.3A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
2.3 1.8 20
Avalanche Current
IAS 6
Avalanche Energy
L= 1mH EAS 18
Power Dissipation
TA = 25 °C TA = 70 °C
PD
1.5 0.9
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient
RqJA
85
Junction-to-Case
RqJC
35
1Pulse width limited by maximum junction temperature.
PA210HVA Datasheet
