PA410BTF Datasheet PDF

ABSOLUTE MAXIMUM RATINGS

(TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID 10 6 IDM 30 Avalanche Current IAS 9.8 Avalanche Energy L = 0.1mH EAS 4.8 Power Dissipation TC = 25 °C PD 29 TC = 100 °C 11 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJC RqJA TYPICAL MAXIMUM 4.2 62.5 UNITS °C / W REV 1.0 1 2017/1/19 PA410BTF N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS

(TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA 100 V 1.3 1.