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PA610NV
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 100V
RDS(ON) 160mΩ @VGS =10V
-100V
200mΩ @VGS = -10V
ID 2.5A -2.2A
Channel N P
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
N 100 VDS P -100
Gate-Source Voltage
N ±30 VGS P ±30
Continuous Drain Current
TA = 25 °C TA = 70°C
N 2.5 P -2.2 ID N 2 P -1.7
Pulsed Drain Current1
N 20 IDM P -20
Avalanche Current
N 24 IAS P -28
Avalanche Energy
L = 0.1mH
N 28 EAS P 38
Power Dissipation
TA = 25 °C TA = 70 °C
N 2
P PD
N 1.28
P
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W °C
REV 1.
PA610NV Datasheet
