PB6C4JU - Dual N-Channel Enhancement Mode MOSFET

UNIKC

Datasheet Details

Part number	PB6C4JU
Manufacturer	UNIKC
File Size	770.64 KB
Description	Dual N-Channel Enhancement Mode MOSFET
Datasheet	PB6C4JU Datasheet
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PB6C4JU Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20V 19.5mΩ @VGS = 4.5V 7A TDFN 2X3-6 1,2:S1 3:G1 4:G2 5,6:S2 7:D1/D2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA= 70 °C ID 7 6 IDM 25 Avalanche Current IAS 13 Avalanche Energy3 EAS 8.5 Power Dissipation TA= 25 °C TA= 70°C PD 1.8 1.2 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 68 1Pulse width limited by maximum junction temperature.

Published: Feb 9, 2017 |