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PB6C4JY
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 19.5mΩ @VGS = 4.5V
ID 7.6A
PDFN 2X5
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±8
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
7.6 6 25
Avalanche Current
IAS 13
Avalanche Energy
L = 0.1mH
EAS
8.9
Power Dissipation
TA = 25 °C TA = 70 °C
PD
1.9 1.2
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
65
Junction-to-Case
RqJC
7
1Pulse width limited by maximum junction temperature.
PB6C4JY Datasheet
