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PD516BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 7.5mΩ @VGS = 10V
ID 55A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current2 Pulsed Drain Current1
TC= 25 °C TC= 100 °C
ID IDM
55 35 150
Avalanche Current
IAS 24
Avalanche Energy
L=0.1mH
EAS
28.7
Power Dissipation
TC= 25 °C TC= 100°C
PD
39 15
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL
Junction-to-Ambient
RqJA
Junction-to-Case 1Pulse width limited by maximum junction temperature.
PD516BA Datasheet
