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PD6B2BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 6.2mΩ @VGS = 10V
ID 63A
TO-252
100% UIS Tested 100% Rg Tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current2 Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
63 40 120
Avalanche Current
IAS 25
Avalanche Energy
L = 0.1mH
EAS
31
Power Dissipation
TC = 25 °C TC = 100 °C
PD
48 19
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Ambient
Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Package limitation current is 39A.
PD6B2BA Datasheet
