Click to expand full text
PE528BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID3
30V
19mΩ @VGS = 10V
21A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
±20
Tc = 25 °C
21
Continuous Drain Current3
Tc = 100 °C TA = 25 °C
ID
14 8
Pulsed Drain Current1
TA= 70 °C
6.4
IDM
40
Avalanche Current
IAS
17
Avalanche Energy
L =0.1mH
EAS
15
TC = 25 °C
15
Power Dissipation
TC = 100 °C TA = 25 °C
PD
6.2 2
TA = 70 °C
1.