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PE506BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 6mΩ @VGS = 10V
ID 38A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current3
Pulsed Drain Current1 Avalanche Current
Tc = 25 °C Tc = 100 °C TA = 25 °C TA= 70 °C
ID
IDM IAS
38 24 12 9.8 60 32
Avalanche Energy
L =0.1mH
EAS
53
TC = 25 °C
Power Dissipation
TC = 100 °C TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
PD TJ, Tstg
15.6 6.3 1.6 1 -55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
77
Junction-to-Case
RqJC
8
1Pulse width limited by maximum junction temperature.
PE506BA Datasheet
