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PE507BA - MOSFET

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Datasheet Details

Part number PE507BA
Manufacturer UNIKC
File Size 514.86 KB
Description MOSFET
Datasheet download datasheet PE507BA Datasheet

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PE507BA P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 14mΩ @VGS = -10V ID -28A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±25 Tc = 25 °C -28 Continuous Drain Current3 Tc = 100 °C TA = 25 °C ID -18 -10 Pulsed Drain Current1 TA= 70 °C IDM -8 -50 Avalanche Current IAS -42 Avalanche Energy L =0.1mH EAS 87 TC = 25 °C 16 Power Dissipation TC = 100 °C TA = 25 °C PD 6 2 TA = 70 °C 1.3 Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 60 Junction-to-Case RqJC 7.