PE642DT Overview
PE642DT Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS Q2 30V RDS(ON) 9mΩ @VGS = 10V Q1 30V 10.5mΩ @VGS = 10V ID 34A 31A PDFN 3X3S RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 Drain-Source Voltage VDS 30.