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PE642DT
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS Q2 30V
RDS(ON) 9mΩ @VGS = 10V
Q1 30V 10.5mΩ @VGS = 10V
ID 34A 31A
PDFN 3X3S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Q2
Q1
Drain-Source Voltage
VDS 30 30
Gate-Source Voltage
VGS ±20 ±20
Continuous Drain Current3 Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID
34 31 22 20
IDM 48 46
Continuous Drain Current3
TA = 25 °C TA = 70 °C
ID
11 9.7 8.8 7.7
Avalanche Current
IAS 21 18.3
Avalanche Energy
L = 0.1mH
EAS
22 16.7
Power Dissipation
TC = 25 °C TC = 100 °C
PD
20 19 8 7.6
Power Dissipation
TA = 25 °C TA = 70 °C
PD
2 1.7 1.2 1.
PE642DT Datasheet
