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PE674DT
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
Q2 30V
7mΩ @VGS = 10V
Q1 30V 10.5mΩ @VGS = 10V
ID 39A 31A
PDFN 3X3S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Q2
Q1
Drain-Source Voltage
VDS 30 30
Gate-Source Voltage
VGS ±20 ±20
Continuous Drain Current3 Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
39 31 25 20 50 45
Continuous Drain Current3
TA = 25 °C TA = 70 °C
ID
12 9.5 10 7.6
Avalanche Current
IAS 23 17.5
Avalanche Energy
L = 0.1mH
EAS
26.4 15.3
Power Dissipation
TC = 25 °C TC = 100 °C
PD
20 19 8.3 7.6
Power Dissipation
TA = 25 °C TA = 70 °C
PD
2.2 1.7 1.4 1.
PE674DT Datasheet
