Datasheet4U Logo Datasheet4U.com

PV537BA - P-Channel MOSFET

📥 Download Datasheet

Datasheet preview – PV537BA

Datasheet Details

Part number PV537BA
Manufacturer UNIKC
File Size 459.73 KB
Description P-Channel MOSFET
Datasheet download datasheet PV537BA Datasheet
Additional preview pages of the PV537BA datasheet.

📁 Similar Datasheet

  • PV5 - Vertical Mount 2W to 10W Ceramic Excased Resistors (RCD Components)
  • PV507BA - P-Channel Logic Level Enhancement Mode Field Effect Transistor (NIKO-SEM)
  • PV50K3225 - Low & Medium Voltage Plastic Encapsulated SMD Varistor (Stackpole Electronics)
  • PV50K4032 - Low & Medium Voltage Plastic Encapsulated SMD Varistor (Stackpole Electronics)
  • PV510BA - N-Channel Enhancement Mode Field Effect Transistor (NIKO-SEM)
  • PV563BA - P-Channel Enhancement Mode Field Effect Transistor (NIKO-SEM)
  • PV5G3EA - P-Channel Field Effect Transistor (NIKO-SEM)
Other Datasheets by UNIKC

Full PDF Text Transcription

Click to expand full text
PV537BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 9mΩ @VGS = -10V ID -11A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -11 -8.7 -50 Avalanche Current IAS -35 Avalanche Energy L=0.1mH EAS 61 Power Dissipation TA = 25 °C TA = 70 °C PD 1.8 1.2 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 Junction-to-Case RqJA RqJC 68 °C / W 25 1Pulse width limited by maximum junction temperature.
Published: |