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PV537BA
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
9mΩ @VGS = -10V
ID -11A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
-11 -8.7 -50
Avalanche Current
IAS -35
Avalanche Energy
L=0.1mH
EAS
61
Power Dissipation
TA = 25 °C TA = 70 °C
PD
1.8 1.2
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Ambient2 Junction-to-Case
RqJA RqJC
68 °C / W
25
1Pulse width limited by maximum junction temperature.
PV537BA Datasheet
