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PZ2103NV
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 21mΩ @VGS = 10V
-30V
34mΩ @VGS = -10V
ID Channel 8A N -6A P
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
N 30 VDS P -30
Gate-Source Voltage
N ±20 VGS P ±20
Continuous Drain Current
TA = 25 °C TA = 70 °C
N8 P -6 ID N 6 P -5
Pulsed Drain Current1
N 36 IDM P -27
Avalanche Current
N 20 IAS P -20
Avalanche Energy
L = 0.1mH
N 21 EAS P 21
Power Dissipation
TA = 25 °C TA = 70 °C
N2 P2 PD N 1.3 P 1.3
Junction & Storage Temperature Range Lead Temperature (1/16" from case for 10 sec .)
TJ, TSTG TL
-55 to 150 275
UNITS V
A
mJ W °C
Ver 1.
PZ2103NV Datasheet
