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PZ2N7002M
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V
2Ω @VGS = 10V
ID 300mA
SOT-23(S)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
±25
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID
300 190
IDM
1
Power Dissipation
TC = 25 °C
PD
TC = 100 °C
0.35 0.14
Operating Junction & Storage Temperature Range
TJ, TSTG
-40 to 150
UNITS V
mA A W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJA
TYPICAL
MAXIMUM UNITS
350
°C / W
REV 1.
PZ2N7002M Datasheet
