PZ2N7002M Datasheet and Specifications PDF

NIKO-SEM N-Channel Logic Level Enhancement PZ2N7002M Mode Field Effect Transistor SOT-23(S) Halogen-Free & Lead-Free Drain PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 2Ω ID 300mA Gate ESD PROTECT.

d Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current1 ID(ON) Drain-Source On-State Resistance1 RDS(ON) Forward Transconductance1 gfs VGS = 0V, ID = 100A VDS = VGS, ID = 100A 60 V 1.0 1.8 2.5 VDS = 0V, VGS = ±16V ±30 A VDS = 48V.

PZ2N7002M N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 2Ω @VGS = 10V ID 300mA SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST .

0V, ID = 100mA VDS = VGS, ID = 100mA VDS = 0V, VGS = ±16V 60 1.0 1.8 2.5 ±30 Zero Gate Voltage Drain Current IDSS VDS = 48V, VGS = 0V VDS = 40V, VGS = 0V , TJ = 125 °C 1 10 On-State Drain Current1 ID(ON) VDS = 10V, VGS = 10V 1 Drain-Source On-State Resistance1 Forward Transconductance1 RD.