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PZP003BYB - N-Channel MOSFET

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Part number PZP003BYB
Manufacturer UNIKC
File Size 311.80 KB
Description N-Channel MOSFET
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PZP003BYB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 6Ω @VGS = 4V ID 110mA SOT-523 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current1 Pulsed Drain Current2 TA = 25 °C TA = 100 °C ID IDM 110 70 400 Avalanche Current IAS 300 Avalanche Energy L = 0.1mH EAS 0.5 Power Dissipation TA = 25 °C TA = 100 °C PD 150 60 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V mA mJ mW °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1Limited by maximum junction temperature. 2Limited by package. SYMBOL RqJA TYPICAL MAXIMUM UNITS 833 °C / W Ver 1.
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