Download 19N10V Datasheet PDF
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19N10V Description

Power MOSFET The U TC 100V N-Chan nel enhancement mode po wer fiel d effect transistors (MOSFET) are pro duced by UTC’s plan ar stripe, DMOS techno logy which has bee n tail ored esp ecially in the avalanche an d mutation mode to min imize on-state re sistance, provide sup erior s witching p erformance, and withstand h igh en ergy pulse. T hey are suited for l ow voltage ap plications s uch as aud io amplifier, high...

19N10V Key Features

  • RDS(ON) = 0.1Ω @VGS = 10 V
  • Ultra low gate charge ( typical 19nC )
  • Low reverse transfer Capacitance ( CRSS = typical 32pF )
  • Fast switching capability
  • Avalanche energy Specified
  • Improved dv/dt capability, high ruggedness
  • SYMBOL
  • ORDERING INFORMATION