Unisonic Technologies 10N15
10N15 is an N-channel enhancement mode silicon-gate power field effect transistors, it uses UTC’s advanced technology to provide the customers with high breakdown voltage etc. The UTC 10N15 is suitable for switching converters, switching regulators, relay drivers and motor drivers, etc.| Part No. | 10N15 |
|---|---|
| Datasheet | 10N15 Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC 1 Power MOSFET TO-220 TO-220F1●
FEATURES
* RDS(ON)<0.3Ω @VGS=10V, ID=10A * High breakdown voltage 1 TO - 252● SYMBOL
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 10N15L-TA3-T 10N15G-TA3-T TO-220 10N15L-TF1-T 10N15G-TF1-T TO-220F1 10N15L-TN3-T 10N15G-TN3-T TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123 GDS GDS GDS Packing Tube Tube Tape Reel
● MARKING Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-939.c 10N15 Preliminary Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC=25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage (Note 1) VDSS 150 V Drain-Gate Voltage (RGS=20kΩ) (TJ=25~125°C) VDGR 150 V Gate-Source Voltage VGSS ±20 V Drain Current Continuous Pulsed ID IDM 10 25 (Note 2) A A TO-220 100 W Power Dissipation TO-220F1 PD 62 W TO-252 54 W TO-220 0.8 W/°C Linear Derating Factor TO-220F1 0.48 W/°C TO-252 0.43 W/°C Junction Temperature Storage Temperature Range TJ TSTG -55~+150 -55~+150 °C °C Notes: 1.
