Page 2
Page 3
10N80-CQ Key Features
- RDS(ON) ≤ 1.4 Ω @ VGS=10V, ID=5.0A
- Low Reverse Transfer Capacitance
- Fast Switching Capability
- Avalanche Energy Specified
- Improved dv/dt Capability, High Ruggedness
- SYMBOL
- ORDERING INFORMATION
- MARKING
Other 10N80-CQ Datasheets
| Manufacturer |
Part Number |
Description |
Inchange Semiconductor |
10N80
|
N-Channel MOSFET |
Unisonic Technologies |
10N80
|
N-CHANNEL POWER MOSFET |
Nell Power Semiconductor |
10N80
|
N-Channel Power MOSFET |
Fairchild Semiconductor |
10N80C
|
800V N-Channel MOSFET |