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10N80-CQ - N-CHANNEL POWER MOSFET

General Description

The UTC 10N80-CQ provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • S.
  • RDS(ON) ≤ 1.4 Ω @ VGS=10V, ID=5.0A.
  • Low Reverse Transfer Capacitance.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, High Ruggedness.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 10N80-CQ 10A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N80-CQ provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 1.4 Ω @ VGS=10V, ID=5.