11N50 Datasheet PDF | Unisonic Technologies

Unisonic Technologies 11N50

11N50 is an N-channel enhancement mode Power FET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. It also can withstand high energy pulse in the avalanche and commutation mode.

Part No.	11N50
Datasheet	11N50 Download
Manufacturer	Unisonic Technologies
Description	N-CHANNEL POWER MOSFET
Buy	Stock & Price

DESCRIPTION

The UTC 11N50 is an N-channel enhancement mode Power FET. The UTC 11N50 is universally applied in electronic lamp ballasts based on half bridge topology, high efficiency switched mode power supplies, active power factor correction, etc. 1 TO-220F1

FEATURES

* Low Gate Charge: 43nC (TYP.) * 11A, 500V, RDS(ON)=0.55Ω @ VGS=10V * Fast Switching * Low CRSS: 25pF (TYP.) * With 100% Avalanche Tested * Improved dv/dt Capability * Fast Recovery Body Diode: 90ns (TYP.) SYMBOL D G S ORDERING INFORMATION Ordering Number Lead Free Halogen Free 11N50L- TF1-T 11N50G-TF1-T Package TO-220F1 Pin Assignment 1 2 3 G D S Packing Tube Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-462.a 11N50 Preliminary Power MOSFET

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage VDSS 500 V Gate to Source Voltage VGSS ±30 V TC=25°C ID 11 (Note 1) A Continuous Drain Current ID 7 (Note 1) A TC=100°C Pulsed Drain Current (Note 2) IDM 44 (Note 1) A Single Pulsed...