Unisonic Technologies 11N80
11N80 is an N-Channel power MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and high switching speed. The UTC 11N80 is suitable for high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.| Part No. | 11N80 |
|---|---|
| Datasheet | 11N80 Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC 1 1 Power MOSFET TO-3P TO-220F1●
FEATURES
* RDS(ON) ≤ 1.0Ω @ VGS=10V, ID=5.5A * High switching speed 1 TO-220F2● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 11N80L-TF1-T 11N80G-TF1-T TO-220F1 11N80L-TF2-T 11N80G-TF2-T TO-220F2 11N80L-T3P-T 11N80G-T3P-T TO-3P Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123 GDS GDS GDS Packing Tube Tube Tube
● MARKING Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-893.f 11N80 Preliminary Power MOSFET
●
ABSOLUTE MAXIMUM RATINGS
(TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 800 V Gate-Source Voltage Drain Current Avalanche Current Continuous Pulsed VGSS ID IDM IAR ±30 11 44 10.5 V A A A Avalanche Energy Peak Diode Recovery dv/dt Single Pulsed EAS dv/dt 551 mJ 1.8 V/ns Power Dissipation (TC=25°C) TO-220F1/TO-220F2 TO-3P PD 50 297 W Junction Temperature TJ -55 ~ +150 °C Storage Temperature Range TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
