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14N65L - N-CHANNEL MOSFET

Download the 14N65L datasheet PDF. This datasheet also covers the 14N65-TC variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

power field effect transistors (MOSFET) which are produced using UTC’s proprietary, planar stripe, DMOS technology.

These devices are suited for high efficiency switch mode power supply.

Key Features

  • RDS(ON) ≤ 0.7 Ω @ VGS=10V, ID=7.0A.
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness 1 1 1 Power MOSFET TO-220F1 TO-220F3 TO-263.
  • SYMBOL 2.Drain 1.Gate 3.Source.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (14N65-TC-UTC.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Unisonic Technologies

Part Number Description
14N65-TC N-CHANNEL MOSFET
14N65G N-CHANNEL MOSFET
14N65KG N-CHANNEL POWER MOSFET
14N65KL N-CHANNEL POWER MOSFET
14N60-MH N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
UNISONIC TECHNOLOGIES CO., LTD 14N65-TC 14A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 14N65-TC are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTC’s proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode the advanced technology has been especially tailored.  FEATURES * RDS(ON) ≤ 0.7 Ω @ VGS=10V, ID=7.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness 1 1 1 Power MOSFET TO-220F1 TO-220F3 TO-263  SYMBOL 2.Drain 1.Gate 3.