Datasheet4U Logo Datasheet4U.com

14N65K-MT - N-CHANNEL POWER MOSFET

General Description

The UTC 14N65K-MT is an N-Channel enhancement mode power MOSFET.

The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching speed.

It can also withstand high energy pulse under the avalanche and commutation mode conditions.

Key Features

  • S.
  • RDS(ON) < 0.63Ω @ VGS = 10V, ID = 7 A.
  • Fast switching capability.
  • Avalanche energy tested.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL 2.Drain 1 TO-220F2 1.Gate 3.Source.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
14N65KG N-CHANNEL POWER MOSFET UTC
14N65KL N-CHANNEL POWER MOSFET UTC
14N65-TC N-CHANNEL MOSFET UTC
14N65G N-CHANNEL MOSFET UTC
14N65L N-CHANNEL MOSFET UTC

Other Datasheets by Unisonic Technologies

Part Number Description
14N40K-MT N-CHANNEL POWER MOSFET
14N50 N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
UNISONIC TECHNOLOGIES CO., LTD 14N65K-MT Preliminary 14A, 650V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 14N65K-MT is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching speed. It can also withstand high energy pulse under the avalanche and commutation mode conditions. The UTC 14N65K-MT is ideally suitable for high efficiency switch mode power supply, power factor correction and electronic lamp ballast based on half bridge topology.  FEATURES * RDS(ON) < 0.63Ω @ VGS = 10V, ID = 7 A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness  SYMBOL 2.Drain 1 TO-220F2 1.Gate 3.