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18NM80-Q - 800V N-CHANNEL MOSFET

Description

The UTC 18NM80-Q is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics.

This power MOSFET is usually used at AC-DC converters for power applications.

Features

  • S.
  • RDS(ON) ≤ 0.43 Ω @ VGS=10V, ID=6.0A.
  • Fast switching capability.
  • Avalanche energy tested.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL (2) Drain (5) Drain 1 TO-247 5 1 DFN8080-4 (1) Gate (3) Source TO-220F/TO-220F1 TO-247/TO-252 (1) Gate (2) Driver Source (3, 4) Power Source DFN8080-4.

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Datasheet preview – 18NM80-Q

Datasheet Details

Part number 18NM80-Q
Manufacturer UTC
File Size 762.61 KB
Description 800V N-CHANNEL MOSFET
Datasheet download datasheet 18NM80-Q Datasheet
Additional preview pages of the 18NM80-Q datasheet.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD 18NM80-Q 18A, 800V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 18NM80-Q is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power applications. Power MOSFET 1 1 TO-220F1 TO-220F 1 TO-252  FEATURES * RDS(ON) ≤ 0.43 Ω @ VGS=10V, ID=6.
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