1D5N10 Datasheet | Unisonic Technologies

UNISONIC TECHNOLOGIES CO., LTD Preliminary 1.5A, 100V N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR - DESCRIPTION The UTC 1D5N10 is a N-channel MOSFET, it uses UTC’s advanced technology to provide the customers with high switch speed and low gate charge. - Features - RDS(ON) ≤ 0.6 Ω @ VGS=10V, ID=0.75A - High switch speed - Low gate charge - SYMBOL Power MOSFET - ORDERING INFORMATION Ordering Number Lead Free Halogen Free 1D5N10L-AE3-R 1D5N10G-AE3-R Note: Pin Assignment: G: Gate S: Source D: Drain Package SOT-23 Pin Assignment 123 GSD Packing Tape Reel - MARKING .unisonic..tw Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 5 QW-R209-240.b Preliminary Power MOSFET -...