Description
The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.
Features
- S.
- RDS(ON) ≤ 11.5Ω @ VGS=10V, ID=0.6A.
- Ultra Low gate charge (typical 5.0nC).
- Low reverse transfer capacitance (CRSS = typical 3.0 pF).
- Fast switching capability.
- Avalanche energy specified.
- Improved dv/dt capability, high ruggedness.
- SYMBOL
Power MOSFET
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QW-R502-052.Q
1N60.
1N60 Datasheet
