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1N60 Datasheet 1.2a 600v N-channel MOSFET

Manufacturer: Unisonic Technologies

Overview: UNISONIC TECHNOLOGIES CO., LTD 1N60 1.2A, 600V N-CHANNEL POWER.

General Description

The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

Key Features

  • S.
  • RDS(ON) ≤ 11.5Ω @ VGS=10V, ID=0.6A.
  • Ultra Low gate charge (typical 5.0nC).
  • Low reverse transfer capacitance (CRSS = typical 3.0 pF).
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL Power MOSFET www. unisonic. com. tw Copyright © 2018 Unisonic Technologies Co. , Ltd 1 of 9 QW-R502-052.Q 1N60.

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