1N60
DESCRIPTION
The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
- FEATURES
- RDS(ON) ≤ 11.5Ω @ VGS=10V, ID=0.6A
- Ultra Low gate charge (typical 5.0n C)
- Low reverse transfer capacitance (CRSS = typical 3.0 p F)
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
- SYMBOL
Power MOSFET
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QW-R502-052.Q
- ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
1N60L-AA3-R
1N60G-AA3-R
1N60L-TA3-T
1N60G-TA3-T
1N60L-TF2-T
1N60G-TF2-T
1N60L-TF3-T
1N60G-TF3-T
1N60L-TM3-T
1N60G-TM3-T
1N60L-TMS-T
1N60G-TMS-T
1N60L-TMS2-T
1N60G-TMS2-T
1N...
