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1N60 - 1.2A 600V N-CHANNEL MOSFET

General Description

The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Key Features

  • S.
  • RDS(ON) ≤ 11.5Ω @ VGS=10V, ID=0.6A.
  • Ultra Low gate charge (typical 5.0nC).
  • Low reverse transfer capacitance (CRSS = typical 3.0 pF).
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL Power MOSFET www. unisonic. com. tw Copyright © 2018 Unisonic Technologies Co. , Ltd 1 of 9 QW-R502-052.Q 1N60.

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Other Datasheets by Unisonic Technologies

Part Number Description
1N60P 600V 1.2A N-CHANNEL POWER MOSFET

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UNISONIC TECHNOLOGIES CO., LTD 1N60 1.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) ≤ 11.5Ω @ VGS=10V, ID=0.6A * Ultra Low gate charge (typical 5.0nC) * Low reverse transfer capacitance (CRSS = typical 3.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness  SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2018 Unisonic Technologies Co.