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20N65 Datasheet PDF

Unisonic Technologies 20N65

20N65 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode.
Part No. 20N65
Datasheet 20N65 Download
Manufacturer
Unisonic Technologies
Description N-CHANNEL POWER MOSFET
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20N65 datasheet page 1 preview

DESCRIPTION

The UTC The UTC 20N65 is universally applied in motor control, UPS, DC choppers and switch-mode and resonant-mode power supplies.
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FEATURES

* RDS(ON) = 0.45Ω @VGS = 10 V * High switching speed
● SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source
● ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 20N65L-T47-T 20N65G-T47-T 20N65L-T3P-T 20N65G-T3P-T Pin Assignment: G: Gate D: Drain S: Source Package TO-247 TO-3P Pin Assignment 123 GDS GDS Packing Tube Tube Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-731.B 20N65 Power MOSFET
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ABSOLUTE MAXIMUM RATINGS

(TC =25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage Drain Current (TC=25°C) Avalanche Energy Continuous Pulsed Single Pulsed(Note 2) VGSS ID IDM EAS ±30 20 80 1200 V A A mJ Power Dissipation TO-247 TO-3P PD 367 W 416 W Junction Temperature Storage Temperature TJ TSTG +150 -55~+150 °C °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
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