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20N60 Datasheet PDF

Unisonic Technologies 20N60

20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode.
Part No. 20N60
Datasheet 20N60 Download
Manufacturer
Unisonic Technologies
Description 600V N-CHANNEL POWER MOSFET
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20N60 datasheet page 1 preview

DESCRIPTION

The UTC The UTC 20N60 is universally applied in motor control, UPS, DC choppers and switch-mode and resonant-mode power supplies.
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FEATURES

* RDS(ON) < 0.45Ω @ VGS=10V, ID=10A * High switching speed
● SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source
● ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 20N60L-T47-T 20N60G-T47-T 20N60L-T3P-T 20N60G-T3P-T Pin Assignment: G: Gate D: Drain S: Source Package TO-247 TO-3P Pin Assignment 123 GDS GDS Packing Tube Tube
● MARKING Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-587.I 20N60 Power MOSFET
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ABSOLUTE MAXIMUM RATINGS

(TC =25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS VGSS 600 V ±30 V Drain Current Continuous Pulsed ID IDM 20 A 80 A Avalanche Energy Power Dissipation Single Pulsed(Note 2) TO-247 TO-3P EAS PD 1200 370 416 mJ W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
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