Datasheet Summary
20N60/F20N60/20N60D 20A 600V N-channel Enhancement Mode Power MOSFET
1 Description
These silicon N-channel Enhanced VDMOSFETs are obtained by the self-aligned planar Technology which reduce the conduction loss,improve switching performance and enhance the avalanche energy.The package form is TO-220F. Which accords with the RoHS standard.
VDSS = 600V RDS(on) （TYP)= 0.36Ω
ID = 20A
2 Features
- Fast Switching
- Low On Resistance(Rdson≤0.45Ω)
- Low Gate Charge(Typical:61nC)
- Low Reverse Transfer Capacitances(Typical:20pF)
- 100% Single Pulse Avalanche Energy Test
- 100% ΔVDS Test
3 Application
- Used in various power switching circuit for system miniaturization and higher efficiency.
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