Datasheet Details
| Part number | 20N60 |
|---|---|
| Manufacturer | ROUM |
| File Size | 1.14 MB |
| Description | 20A 600V N-channel Enhancement Mode Power MOSFET |
| Datasheet |
 20N60 Datasheet
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General Description
These silicon N-channel Enhanced VDMOSFETs are obtained by the self-aligned planar Technology which reduce the conduction loss,improve switching performance and enhance the avalanche energy.The package form is TO-220F.
Which accords with the RoHS standard.
Key Features
- Fast Switching.
- Low On Resistance(Rdson≤0.45Ω).
- Low Gate Charge(Typical:61nC).
- Low Reverse Transfer Capacitances(Typical:20pF).
- 100% Single Pulse Avalanche Energy Test.
- 100% ΔVDS Test 3.