20N60
Description
These silicon N-channel Enhanced VDMOSFETs are obtained by the self-aligned planar Technology which reduce the conduction loss,improve switching performance and enhance the avalanche package form is TO-220F. Which accords with the RoHS standard.
Key Features
- Fast Switching
- Low On Resistance(Rdson≤0.45Ω)
- Low Gate Charge(Typical:61nC)
- Low Reverse Transfer Capacitances(Typical:20pF)
- 100% Single Pulse Avalanche Energy Test
- 100% ΔVDS Test
