20N60
Key Features
- for low on-state conduction losses l High current handling capability l MOS Gate turn-on
- drive simplicity l Voltage rating guaranteed at high temperature (125°C)
- Part: 20N60
- Description: IGBT
- Manufacturer: IXYS
- Size: 61.12 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| 20N60C2 | Infineon | Power Transistor |
| 20N60A4D | Fairchild Semiconductor | HGTG20N60A4D |
| 20N60K-MK | Unisonic Technologies | N-CHANNEL MOSFET |
| 20N60CFD | Infineon | Cool MOS Power Transistor |
| 20N60A | JieJie Microelectronics | N-channel MOSFET |
| JVR-20N680L | RFE | METAL OXIDE VARISTOR |
| JVR-20N681K | RFE | METAL OXIDE VARISTOR |
| 20N65M5 | STMicroelectronics | N-Channel MOSFET |
| 20N680K | HuaXingAn Electronics | Metal Oxide Varistor |
| JVR-20N621K | RFE | METAL OXIDE VARISTOR |