20N60C2
20N60C2 is Power Transistor manufactured by Infineon.
Feature
- New revolutionary high voltage technology
- Worldwide best R DS(on) in TO 220
- Ultra low gate charge
..
- Periodic
Product Summary VDS @ Tjmax 650 R DS(on) ID
P-TO220-3-31 P-TO263-3-2
V Ω A
0.19 20 avalanche rated
P-TO220-3-1
- Extreme dv/dt rated
- Ultra low effective capacitances
1 P-TO220-3-31
Type SPP20N60C2 SPB20N60C2 SPA20N60C2
Package P-TO220-3-1 P-TO263-3-2
Ordering Code Q67040-S4320 Q67040-S4322
Marking 20N60C2 20N60C2 20N60C2
P-TO220-3-31 Q67040-S4333
Maximum Ratings Parameter Symbol ID Value SPP_B SPA Unit
Continuous drain current
TC = 25 °C TC = 100 °C
A 20 13 201) 131) 40 690 1 20 6 ±20
±30
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
ID =10A, VDD =50V
ID puls EAS EAR IAR
40 690 1 20 6 ±20
±30
A m J
Avalanche energy, repetitive t AR limited by Tjmax 2)
ID =20A, VDD =50V
Avalanche current, repetitive t AR limited by Tjmax Reverse diode dv/dt
IS = 20 A, VDS < VDD , di/dt=100A/µs, Tjmax =150°C
A V/ns V W dv/dt
VGS VGS Ptot
Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC =...
