20N60 - N-Channel MOSFET

VBsemi

Key Features

Reduced trr, Qrr, and IRRM.
Low figure-of-merit (FOM) Ron x Qg.
Low input capacitance (Ciss).
Low switching losses due to reduced Qrr.
Ultra low gate charge (Qg).
Avalanche energy rated (UIS).

20N60 n-channel mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	20N60
Manufacturer	VBsemi
File Size	246.87 KB
Description	N-Channel MOSFET
Datasheet	20N60 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
20N60	20A 600V N-channel Enhancement Mode Power MOSFET	ROUM
20N60	IGBT	IXYS
20N60	600V N-CHANNEL POWER MOSFET	UTC
20N60	N-Channel MOSFET	ON Semiconductor
20N60A	IGBT	IXYS

Other Datasheets by VBsemi

Part Number	Description
20N6LG-TO252	N-Channel MOSFET
20N40H	N-Channel 500V Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

20N60-VB 20N60-VB Datasheet N-Channel 650 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 106 14 33 Single 0.