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24NM80-Q - N-CHANNEL MOSFET

General Description

The UTC 24NM80-Q is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics.

This power MOSFET is usually used at AC-DC converters for power applications.

Key Features

  • S.
  • RDS(ON) ≤ 0.26 Ω @ VGS=10V, ID=12A.
  • Fast switching capability.
  • Avalanche energy tested.
  • Improved dv/dt capability, high ruggedness 1 1 TO-247 TO-263.
  • SYMBOL (2) Drain (5) Drain (1) Gate (3) Source TO-220 / TO-220F1 TO-247 / TO-263 (1) Gate (2) Driver Source (3, 4) Power Source DFN8080-4 www. unisonic. com. tw Copyright © 2023 Unisonic Technologies Co. , Ltd 1 of 7 QW-R205-895.e 24NM80-Q Preliminary Power MOSFET.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 24NM80-Q Preliminary 24A, 800V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 24NM80-Q is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power applications. Power MOSFET 1 1 TO-220 TO-220F1 5 1 DFN8080-4  FEATURES * RDS(ON) ≤ 0.26 Ω @ VGS=10V, ID=12A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness 1 1 TO-247 TO-263  SYMBOL (2) Drain (5) Drain (1) Gate (3) Source TO-220 / TO-220F1 TO-247 / TO-263 (1) Gate (2) Driver Source (3, 4) Power Source DFN8080-4 www.unisonic.com.