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2NM60-Q - N-CHANNEL MOSFET

Datasheet Summary

Description

The UTC 2NM60-Q is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics.

This power MOSFET is usually used at DC-DC, AC-DC converters for power applications.

Features

  • S.
  • RDS(ON) < 3.1Ω @ VGS = 10V, ID =1.0A.
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness 11 TO-220F1 TO-251 1 SOT-223 1 TO-252.
  • SYMBOL.

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Datasheet preview – 2NM60-Q

Datasheet Details

Part number 2NM60-Q
Manufacturer UTC
File Size 242.83 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet 2NM60-Q Datasheet
Additional preview pages of the 2NM60-Q datasheet.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD 2NM60-Q Power MOSFET 2.0A, 600V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 2NM60-Q is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC converters for power applications.  FEATURES * RDS(ON) < 3.1Ω @ VGS = 10V, ID =1.
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