Unisonic Technologies 2SB1412
2SB1412 is an epitaxial planar type PNP silicon transistor. When mounted on a 40×40×0.7mm ceramic board.| Part No. | 2SB1412 |
|---|---|
| Datasheet | 2SB1412 Download |
| Manufacturer |  Unisonic Technologies |
| Description | HIGH VOLTAGE SWITCHING TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SB1412L-x-TN3-R 2SB1412G-x-TN3-R TO-252 Note: Pin Assignment: B: Base C: Collector E: Emitter Pin Assignment 123 BCE Packing Tape Reel
● MARKING Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 5 QW-R209-021.E 2SB1412 PNP SILICON TRANSISTOR
● ABSOLUTE MAXIMUM RATING (TA=25C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -6 V Collector Current(DC) IC -5 A Collector Current(PULSE) Single pulse, Pw=10ms ICP -10 A Collector Power Dissipation Collector Power Dissipation (TC=25C) (note2) PD 1W 10 W Junction Temperature TJ +150 C Storage Temperature TSTG -40 ~ +150 C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
