• Part: 2SB1412
  • Description: PNP Transistor
  • Category: Transistor
  • Manufacturer: Weitron Technology
  • Size: 274.28 KB
Download 2SB1412 Datasheet PDF
Weitron Technology
2SB1412
2SB1412 is PNP Transistor manufactured by Weitron Technology.
Features : - Excellent DC Current Gain Characteristics - Low VCE(Sat) D-PAK(TO-252) Mechanical Data: - Case : Molded Plastic - Weight : 0.925 grams ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Collector to Base Voltage Collector to Emitter Voltage Collector to Base Voltage Collector Current Total Device Disspation TA = 25°C Junction Temperature Storage Temperature Symbol .. Value -30 -20 -6 -5 1.0 +150 -55 to +150 Unit V V V A W ˚C ˚C VCBO VCEO VEBO IC PD Tj Tstg Device Marking 2SB1412 = B1412 WEITRON http://.weitron..tw 1/4 28-Oct-05 ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage IC=-50µA, IE=0 Collector-Emitter Breakdown Voltage IC=-1.0m A, IB=0 Emitter-Base Breakdown Voltage IE=-50µA, IC=0 Collector Cut-Off Current VCB=-20V, IE=0 Emitter-Cut-Off Current VEB=-5V, IC=0 Symbol BVCBO BVCEO BVEBO ICBO IEBO Min -30 -20 -6 Typ Max -500 -500 Unit V V V n A n A ON CHARACTERISTICS DC Current Gain VCE=-2V, IC=-0.5A Collector-Emitter Saturation Voltage IC=-4A, IB=-0.1A h FE VCE(sat) 82 390 -1.0 V DYNAMIC CHARACTERISTICS Transition Frequency VCE=-6V, IE=-50m A, f=30MHz Output Capacitance VCB=-20V, IE=0, f=1.0MHz f T Cob 120 60 MHz p F CLASSIFICATION OF h FE Rank Range P 82 - 180 Q 120 - 270 R 180 - 390 WEITRON http://.weitron..tw 2/4 28-Oct-05 5k 2k DC CURRENT GAIN : h FE TA=25°C DC CURRENT GAIN : h FE 5k 2k 1k 500 200 100 50 20 10 5 VCE= - 2V 1k 500 200 100 50 20 10 5 - 1m - 2m - 5m -...