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2SB1412 Datasheet PDF

Weitron Technology 2SB1412

PNP Transistor

Part No. 2SB1412
Datasheet 2SB1412 Download
Manufacturer
Weitron Technology
Description PNP Transistor
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2SB1412 datasheet page 1 preview

FEATURES

: * Excellent DC Current Gain Characteristics * Low VCE(Sat) 1 D-PAK(TO-252)

MECHANICAL DATA

: * Case : Molded Plastic * Weight : 0.925 grams

ABSOLUTE MAXIMUM RATINGS

(TA=25ºC) Rating Collector to Base Voltage Collector to Emitter Voltage Collector to Base Voltage Collector Current Total Device Disspation TA = 25°C Junction Temperature Storage Temperature Symbol Value -30 -20 -6 -5 1.0 +150 -55 to +150 Unit V V V A W ˚C ˚C VCBO VCEO VEBO IC PD Tj Tstg Device Marking 2SB1412 = B1412 WEITRON 1/4 28-Oct-05 2SB1412

ELECTRICAL CHARACTERISTICS

Characteristics Collector-Base Breakdown Voltage IC=-50µA, IE=0 Collector-Emitter Breakdown Voltage IC=-1.0mA, IB=0 Emitter-Base Breakdown Voltage IE=-50µA, IC=0 Collector Cut-Off Current VCB=-20V, IE=0 Emitter-Cut-Off Current VEB=-5V, IC=0 Symbol BVCBO BVCEO BVEBO ICBO IEBO Min -30 -20 -6 Typ Max -500 -500 Unit V V V nA nA ON CHARACTERISTICS DC Current Gain VCE=-2V, IC=-0.5A Collector-Emitter Saturation Voltage IC=-4A, IB=-0.1A hFE VCE(sat) 82 390...
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