2SB1412
2SB1412 is PNP Transistor manufactured by Weitron Technology.
Features
:
- Excellent DC Current Gain Characteristics
- Low VCE(Sat)
D-PAK(TO-252)
Mechanical Data:
- Case : Molded Plastic
- Weight : 0.925 grams
ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Collector to Base Voltage Collector to Emitter Voltage Collector to Base Voltage Collector Current Total Device Disspation TA = 25°C Junction Temperature Storage Temperature Symbol
..
Value -30 -20 -6 -5 1.0 +150 -55 to +150
Unit V V V A W ˚C ˚C
VCBO VCEO VEBO IC PD Tj Tstg
Device Marking 2SB1412 = B1412
WEITRON http://.weitron..tw
1/4
28-Oct-05
ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage IC=-50µA, IE=0 Collector-Emitter Breakdown Voltage IC=-1.0m A, IB=0 Emitter-Base Breakdown Voltage IE=-50µA, IC=0 Collector Cut-Off Current VCB=-20V, IE=0 Emitter-Cut-Off Current VEB=-5V, IC=0 Symbol BVCBO BVCEO BVEBO ICBO IEBO Min -30 -20 -6 Typ Max -500 -500 Unit V V V n A n A
ON CHARACTERISTICS DC Current Gain VCE=-2V, IC=-0.5A Collector-Emitter Saturation Voltage IC=-4A, IB=-0.1A h FE VCE(sat) 82 390 -1.0 V
DYNAMIC CHARACTERISTICS Transition Frequency VCE=-6V, IE=-50m A, f=30MHz Output Capacitance VCB=-20V, IE=0, f=1.0MHz f T Cob 120 60 MHz p F
CLASSIFICATION OF h FE Rank Range P 82
- 180 Q 120
- 270 R 180
- 390
WEITRON http://.weitron..tw
2/4
28-Oct-05
5k 2k
DC CURRENT GAIN : h FE
TA=25°C
DC CURRENT GAIN : h FE
5k 2k 1k 500 200 100 50 20 10 5
VCE=
- 2V
1k 500 200 100 50 20 10 5
- 1m
- 2m
- 5m
-...