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2SB1412 - Silicon PNP Power Transistor

General Description

Low collector-to-emitter saturation voltage : VCE(sat)= -1.0V(Max)@IC= -4A Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25

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isc Silicon PNP Power Transistor DESCRIPTION ·Low collector-to-emitter saturation voltage : VCE(sat)= -1.0V(Max)@IC= -4A ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM PC TJ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ Ta=25℃ Collector Power Dissipation @ TC=25℃ Junction Temperature -30 V -20 V -6 V -5 A -10 A 1.0 W 10 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1412 isc website：www.iscsemi.