Datasheet Details
| Part number | 2SB1412 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 253.65 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SB1412-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SB1412 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 253.65 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SB1412-InchangeSemiconductor.pdf |
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·Low collector-to-emitter saturation voltage : VCE(sat)= -1.0V(Max)@IC= -4A ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM PC TJ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ Ta=25℃ Collector Power Dissipation @ TC=25℃ Junction Temperature -30 V -20 V -6 V -5 A -10 A 1.0 W 10 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1412 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -4A;
IB= -0.1A V(BR)CBO Collector-Base Breakdown Voltage IC= -50uA;
IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SB1412 | Low Frequency Transistor | Rohm |
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2SB1412 | PNP Transistor | Weitron Technology |
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2SB1412 | HIGH VOLTAGE SWITCHING TRANSISTOR | UTC |
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2SB1412 | Low Frequency Transistor | Kexin |
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2SB1412 | PNP Silicon Transistor | SeCoS |
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