2SB1414 - Silicon PNP epitaxial planar type Transistor
Panasonic
Key Features
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Excellent current IC characteristics of forward current transfer ratio hFE vs. collector.
High transition frequency fT.
Allowing automatic insertion with radial taping
10.8±0.2
0.65±0.1 2.5±0.1
0.85±0.1 1.0±0.1 0.8 C
90˚
0.8 C
16.0±1.0
0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2.
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collect.
Silicon PNP epitaxial planar type Power Transistors
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Power Transistors
2SB1414
Silicon PNP epitaxial planar type
For low-frequency driver/high power amplification Complementary to 2SD2134
3.8±0.2
Unit: mm
7.5±0.2 4.5±0.2
■ Features
• Excellent current IC characteristics of forward current transfer ratio hFE vs. collector • High transition frequency fT • Allowing automatic insertion with radial taping
10.8±0.2
0.65±0.1 2.5±0.1
0.85±0.1 1.0±0.1 0.8 C
90˚
0.8 C
16.0±1.0
0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.
2SB1414 Datasheet
